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Author: Aysha Praveen Ansari & Rekha Rikhari

ABSTRACT
Gallium oxide (Ga2O3) is a renowned semiconductor for its high band gap. Its strong surface sensitivity, chemical stability and thermal strength make it a promising candidate for sensors, power electronics, and UV detectors. To support these applications, the structural and morphological properties of Ga2O3 were investigated using scanning electron microscopy (SEM) and X ray diffraction (XRD). SEM analysis revealed a highly agglomerated morphology consisting of uneven, submicron-sized primary particles with coarse surface textures, indicating a large surface area and enhanced surface reactivity. XRD patterns confirmed the formation of the monoclinic β-
Ga2O3 phase, with sharp and intense diffraction peaks demonstrating high crystallinity and phase purity. Collectively, these results confirm the successful synthesis of highly crystalline Ga2O3 and highlight its potential for high temperature electronics, sensing platforms, optoelectronic
devices, and catalytic applications.

Keywords: Gallium Oxide; Semiconductor; Structural analysis